Electronics Below 10nm by https://padlet.com/athirahtaib/ozdiv47oowvs Made with fortitude en-us 2017-10-23 01:05:16 UTC 2025-03-21 00:12:43 UTC hello@padlet.com https://padlet-assets.s3.amazonaws.com/icons/Terminator.png https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199445770 AZYAN, RAHMAH, HANISAH]]> 2017-10-23 05:10:22 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199445770 https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199484106 dr,, video kiteorang besar sgat]]> 2017-10-23 08:55:22 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199484106 https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199615558 ELECTRONICS BELOW ~10nm (FETs)]]> 2017-10-23 15:04:22 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199615558 Nanoconstriction FET (NCFETs) https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199616457 -monolayer graphene with critical dimension below 10nm is used.

-form a constriction in a gold etch mask. (First patterned using litographic technique)

-Form using feedback controlled electromigration (FCE).

*In the typical literature/ FCE, this processed is continued until a tunneling gap is open. They stop the process while a small ~10nm junction gold is left at the middle of the structure.]]> 2017-10-23 15:05:45 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199616457 https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199687047 Electronics Below 10nm - Intro & Conclusion]]> 2017-10-23 17:08:22 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199687047 Single Electron Transistor. https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199688558 1. Lithography defined SET hardly be invent, since the critical dimension of a such transistor (its single electron island size).
2. Simple modification of SE box, splitting its electrode into two parts (source and drain). So that, voltage V may be applied between them turns into SET.
3. SET from FET, but with small conducting island limited by 2 tunnel barrier instead of the usual channel, connecting the source and drain.]]> 2017-10-23 17:11:16 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199688558 Single Electron Box https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199695147 1. Known within a much narrower circle than of MOSFETs.
2. Lets start with a generic single-electron device frequently called the 'single-electron box'.
3. device consists of just one small conductor (island) seperated from an external electrode by a tunnel barrier with high resistance. R>>Rq.
4. External electric field applied to an island using a capacitively coupled gate electrode.
5. The field changes from local fermi level of island and determines the conditions of electron tunneling. ]]> 2017-10-23 17:23:16 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199695147 Introduction By Siti Rahmah https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199889601 2017-10-24 08:54:44 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199889601 FET Devices by Hanisah https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199890256 2017-10-24 08:57:28 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199890256 cont.... from other journal https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199891388 2017-10-24 09:02:20 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199891388 CONCLUSION https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199896639 2017-10-24 09:23:30 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199896639 SET by Azyan Syazani https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199897414 2017-10-24 09:26:56 UTC https://padlet.com/athirahtaib/ozdiv47oowvs/wish/199897414