2. At 460°C the boron trioxide melts to form a thick, viscous liquid which coats the entire melt, including the crucible (hence, liquid encapsulated). This layer, in combination with the pressure in the crystal puller, prevents sublimation of the volatile group V element. 

3.The temperature is increased until the compound synthesises (temperatures and pressures are varied depending on which material is being produced). A seed crystal is then dipped, through the boron trioxide layer, into the melt. The seed is rotated and slowly withdrawn and a single crystal propagates from the seed. 

4.Crystal growth is monitored by the use of CCTV

Bridgman Furnace

Bridgman method

■ Principle & Process

Heating polycrystalline material above its melting point and slowly cooling it from one end of its container, where a seed crystal is located.

Stockbarger method: As a pulling method like Czochralski method, boat pulled out through temperature gradient

Bridgman method: Melt is inside a temperature gradient furnace

■ Characteristics

The shape of the crystal is defined by the container

Drawback: Material is constantly in contact with crucible or sample boat, which introduces mechanical stress that possibly changes ideal crystal structures.

■ Usages & Applications Simple and popular way to producing semiconductor crystals such as GaAs, InP, CdTe.

2.      A needle-eye coil that can run through the rod is activated to provide RF power to the rod, inducing strong edy current and melting a 2-cm long zone in the rod. 

3.      The movement of the molten zone through the entire length of the rod purifies the rod and forms the near-perfect single crystal. 

4.      The process may be repeated several times to obtain high purity single crystal.