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      <title>Semiconductor Devices by Nurul Yunus</title>
      <link>https://padlet.com/namymyj05r/3id3t18rasph</link>
      <description>Metal semiconductor </description>
      <language>en-us</language>
      <pubDate>2017-04-20 03:48:56 UTC</pubDate>
      <lastBuildDate>2025-12-08 06:21:53 UTC</lastBuildDate>
      <webMaster>hello@padlet.com</webMaster>
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         <title>Hi everyone, I created this for you to communicate with each other through Padlet environment. :D</title>
         <author>namymyj05r</author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/167419298</link>
         <description><![CDATA[]]></description>
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         <pubDate>2017-04-21 05:25:21 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/167419298</guid>
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         <title>Link to Tes or Blendspace</title>
         <author>namymyj05r</author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/168287687</link>
         <description><![CDATA[<div><a href="https://www.tes.com/lessons/Ta5ByZayWF-TLA/collab/YBInyCzDolskOgevSQUMHLCViSKNTMeD/register">https://www.tes.com/lessons/Ta5ByZayWF-TLA/collab/YBInyCzDolskOgevSQUMHLCViSKNTMeD/register</a></div>]]></description>
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         <pubDate>2017-04-26 06:22:11 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/168287687</guid>
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         <title>Questions and Answers for Metal Semiconductor Junction Topic</title>
         <author></author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169034364</link>
         <description><![CDATA[<div><br>Group members :<br>1.Elliyani Nazirah bt Ahmad Farid (189819)<br>2.Nur Syafiqah bt Zulkifri (190124)<br>3.Ezatul Hafzan bt Adzmi (188037)<br>4.Nurul Afiqah 'Izzaty bt Tamby Chik (190868)<br>1. <strong>why voltage drop low at metal-semiconductor junction?</strong><br>ans: <br>When sufficient voltage is applied to schottky diode, current starts flowing in the forward direction and a small voltage loss occurs across the terminal of schottky diode.<br>2.<strong> Is the type of semiconductor effect the voltage drop?</strong><br>ans : <br>yes, it is effected because each semiconductor have majority and minority carriers. For example, pn junction carriers are different with metal n-type semiconductor. That is why it is effect the voltage drop.<br><br></div>]]></description>
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         <pubDate>2017-04-30 00:08:26 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169034364</guid>
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         <title>Muhammad Syakir Aidil bin Abdul Rahman 187131                      Nur Aina binti Mohammad Abdul Aziz 189914                   Nurul Nabillah binti Mahmood 190638 Asma binti Abd Rahman 190652</title>
         <author>asma_abdrahman98</author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169034599</link>
         <description><![CDATA[]]></description>
         <enclosure url="https://padletuploads.blob.core.windows.net/prod/196072503/df2ace754030cfcd5940a1101db35e80/Question_for_energy_band_diagram_of_metal_and_n_semiconductor.docx" />
         <pubDate>2017-04-30 00:21:44 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169034599</guid>
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         <title>Questions and Answers for Metal Semiconductor Junction Topic.</title>
         <author></author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169039076</link>
         <description><![CDATA[<div><br>Group Members :<br>1)Tan Sou Wei (187554)<br>2)Quah Kah Meng (188026)<br>3)Faiz Dzulhilmi Bin Mohd Azmi (189826)<br>4)Nufail Izzfarhan Bin Rozley (190288)<br><br>1. What will happen when forward voltage exceeds the internal barrier voltage?<br><strong>When the forward voltage exceeds the diodes P-N junctions internal barrier voltage, which for silicon is about 0.7 volts, avalanche occurs and the forward current increases rapidly for a very small increase in voltage producing a non-linear curve. The “knee” point on the forward curve.</strong><br><br>2. Does Semiconductor diodes are characterized by linear current–voltage characteristics?<br><strong>No,semiconductor diodes are characterized by non-linear current–voltage characteristics as the current flowing through a forward-biased common silicon diode is limited by the ohmic resistance of the PN-junction.</strong></div>]]></description>
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         <pubDate>2017-04-30 04:37:41 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169039076</guid>
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         <title>Questions and Answers for Metal Semiconductor Junction Topic</title>
         <author></author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169043216</link>
         <description><![CDATA[<div>Group Members:<br>1)Azman bin Babah (189871)<br>2)Arif Aizat bin Mohd Hashim (189256)<br>3)Muhammad Danish Irfan bin Ahmad Khalid (190658)<br>4)Muhammad Hasif bin Ani (189959)<br><br>1)<strong> What happen if there is no minority carrier injection occurs in forward bias of Schottky Diode?</strong>The Schottky diode is a majority carrier device. Unlike a p-n diode, in forward bias no minority carrier injection occurs. Thus there is no diffusion capacitance and the device response can be very fast.<br><br>2<strong>)What is the mean by the term of Ohmic Contact in Metal Semiconductor junction?<br></strong>By using easy terms Ohmic Contact is no potential exists between metal and semiconductor .A metal-semiconductor junction results in an Ohmic contact ) if the Schottky barrier height, f<sub>B</sub>, is zero or negative. In such case, the carriers are free to flow in or out of the semiconductor so that there is a minimal resistance across the contact. <br><br></div>]]></description>
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         <pubDate>2017-04-30 07:35:56 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169043216</guid>
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         <title>Assignment 2</title>
         <author>namymyj05r</author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169049361</link>
         <description><![CDATA[<div>6 groups<br>1.energy band diagram of metal n semiconductor(group illah)<br>2. Non-rectifying Ohmic Contacts (group Ammar)<br>3.schottky diode and schottky barrier(grup pidot)<br>4. Comparison schottky+pn diode (group elly)<br>5.current-voltage characteristics (group souwei)<br>6.MESFET (group irfan)</div>]]></description>
         <enclosure url="" />
         <pubDate>2017-04-30 10:18:15 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169049361</guid>
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         <title>Question and Answer for Metal Semiconductor junction Topic</title>
         <author>ammar201580</author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169051237</link>
         <description><![CDATA[<div>Ammar Abdulraqeb Abdo Ahmed 186563<br>Gorakanage Amesh Eromal Gomes 186572<br>Elauhee Muhammad Yunus 186549<br>khaled abdulrahman 186485 </div>]]></description>
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         <pubDate>2017-04-30 11:09:43 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169051237</guid>
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         <title>Questions and Answers for Metal Semiconductor Junction</title>
         <author>l_meitung</author>
         <link>https://padlet.com/namymyj05r/3id3t18rasph/wish/169056864</link>
         <description><![CDATA[<div>Leong Mei Tung (188066)</div><div>Jacintha a/p Joseph (188408)</div><div>Muhamad Iqbal bin Maizul (190311)</div><div>Muhammad Firdaus bin Khosim (190388)</div>]]></description>
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         <pubDate>2017-04-30 13:41:28 UTC</pubDate>
         <guid>https://padlet.com/namymyj05r/3id3t18rasph/wish/169056864</guid>
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