# data[].attributes.body
1. Known within a much narrower circle than of MOSFETs.
2. Lets start with a generic single-electron device frequently called the 'single-electron box'.
3. device consists of just one small conductor (island) seperated from an external electrode by a tunnel barrier with high resistance. R>>Rq.
4. External electric field applied to an island using a capacitively coupled gate electrode.
5. The field changes from local fermi level of island and determines the conditions of electron tunneling.

# data[].attributes.body
1. Lithography defined SET hardly be invent, since the critical dimension of a such transistor (its single electron island size).
2. Simple modification of SE box, splitting its electrode into two parts (source and drain). So that, voltage V may be applied between them turns into SET.
3. SET from FET, but with small conducting island limited by 2 tunnel barrier instead of the usual channel, connecting the source and drain.

# data[].attributes.body
Electronics Below 10nm - Intro & Conclusion

# data[].attributes.body
-monolayer graphene with critical dimension below 10nm is used.

-form a constriction in a gold etch mask. (First patterned using litographic technique)

-Form using feedback controlled electromigration (FCE).

*In the typical literature/ FCE, this processed is continued until a tunneling gap is open. They stop the process while a small ~10nm junction gold is left at the middle of the structure.

# data[].attributes.body
ELECTRONICS BELOW ~10nm (FETs)

# data[].attributes.body
dr,, video kiteorang besar sgat

# data[].attributes.body
AZYAN, RAHMAH, HANISAH