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Here is the DIODE world

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These characteristics indicate behaviour of pn junction when external potential difference is applied.

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Due to concentration gradient majority carriers move from p region to n region and n region to p region respectively.

Due to this movement some charge carriers recombine at the neighbour hood of junction and forms as barrier for the further movement of charge

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An imaginary line which seperates p type and n type regions.

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PN Diode is formed by the addition of P-type and N-type semiconductors.